GlobalFoundries unveils 7nm-class FDX Fusion FD-SOI node

GlobalFoundries has unveiled FDX Fusion, a new 7nm-class manufacturing process built on fully-depleted silicon-on-insulator (FD-SOI) technology. The node promises 7nm-class digital performance and more than twice the transistor density of the company's original 22FDX process introduced around 2015, roughly eight years after GlobalFoundries abandoned development of its 7nm FinFET technology in 2018.

FDX Fusion enters the scene

The first generation of FDX Fusion combines innovations in SOI substrates, transistor structures, and back-end interconnects. GlobalFoundries has not disclosed transistor dimensions, contacted gate pitch, minimum metal pitch, or actual transistor density, leaving the exact meaning of its performance claims unclear. The company plans to start production of chips on FDX Fusion at its Dresden, Germany, facility in 2028.

FDX Fusion supports RF transistors with fT/fmax of up to 0.5 THz, analog and mixed-signal circuitry, embedded nonvolatile memory, and in-memory computing. The combination is intended to enable highly integrated chips that can process sensor data, run AI inference workloads, control external devices, and communicate wirelessly without numerous separate ICs. GlobalFoundries also plans to offer processor IP based on MIPS, ARC, and RISC-V architectures.

A significant development for FD-SOI

GlobalFoundries introduced 22FDX in 2015 and announced its 12FDX successor in 2016, a technology that promised performance comparable to 10nm FinFET and up to 50% lower power consumption. Initial 12FDX tape-outs were expected in 2019, but the node was never adopted for commercial products. Instead, the company focused on enhancements to 22FDX and later introduced 22FDX+, adding RF, embedded memory, and low-power capabilities. FDX Fusion could now represent the realization of GlobalFoundries' original ambitions to scale FD-SOI beyond the 22nm generation, although the company has not said whether it incorporates developments from the 12FDX program.

CEA-Leti, which has researched advanced FD-SOI for years, describes FDX Fusion as a single-digit FD-SOI node. Sébastien Dauvé, chief executive of CEA-Leti, said the institute continues to shape the European roadmap for FD-SOI through the FAMES pilot line.

Questions remain

GlobalFoundries plans to deliver initial demo silicon for customer evaluation in early 2027, followed by the first process design kit in mid-2027. BMW, Bosch, Infineon, NXP, Siemens, and Tesla have expressed interest in FDX Fusion, and Infineon specifically confirmed collaboration on future 7nm-class technologies for radar and wireless communications. The company has not identified specific products or committed production volumes.

The technology's commercial success will depend on actual performance, density, production costs, and the availability of a competitive design ecosystem. The announcement did not include comments from leading EDA and IP developers, and GlobalFoundries has not detailed the EDA tools, standard-cell libraries, memory compilers, and interface IP that chip developers will need. Until concrete numbers emerge, it remains unclear how FDX Fusion will compare with established 7nm-class FinFET processes in density, power, and cost.

Sources: Tomshardware