Samsung and SK hynix Reportedly Push China NAND Beyond 200 Layers as YMTC Rises

China NAND upgrades move past 200 layers

AI-driven demand is extending from DRAM to NAND, and Samsung and SK hynix are upgrading key Chinese facilities. Samsung plans to shift its Xi'an plant from roughly 200-layer NAND to 286-layer V9 output, according to Reuters. SK hynix is already authorized to produce up to 240-layer NAND in Dalian and may seek U.S. approval for research and development on 300-plus-layer technology.

TrendForce estimates that China accounts for roughly 30 to 35 percent of Samsung's total NAND output and an even higher 40 to 45 percent for SK hynix. The share underscores why both companies are trying to keep their Chinese factories close to South Korean production standards.

YMTC adds pressure

The upgrades come as China's YMTC presses into higher layers. Reuters reported that YMTC's NAND lineup is still dominated by 160- and 232-layer products, but the company is already producing 294-layer chips in limited volumes and plans to push beyond 300 layers.

Export rules still shape fab plans

U.S. export restrictions remain a major hurdle. Reuters said Samsung and SK hynix must obtain annual licenses to install U.S.-made equipment at their Chinese plants. Washington indicated in 2025 that it would not approve technology upgrades or capacity expansions there.

Samsung and SK hynix confirmed to Reuters that upgrades were underway in close coordination with Washington, but they declined to disclose detailed production plans. People familiar with the matter said both companies are seeking to produce NAND with more than 200 layers at their Chinese facilities.

Samsung and SK hynix race beyond China

Under an internal project called Monami, French for my friend, Samsung plans to transition the Xi'an facility to 286-layer V9 NAND. SK hynix is reportedly planning to upgrade its Dalian facilities from current 192-layer NAND technology to 240 layers or more.

Beyond China, Samsung has shifted roughly 60 percent of its V-NAND capacity to V9 at 286 layers, according to Seoul Economic Daily. The report said Samsung is ramping up shipments to NVIDIA and has begun mass production and supply of V10 NAND, while development of next-generation V11 targeting around 500 layers is accelerating.

SK hynix is also stepping up its move to 321-layer NAND to meet growing demand. Bloter reported that the technology became its largest NAND production segment in 2Q26, with roughly half of its domestic NAND capacity expected to transition to 321-layer products by year-end.

Sources: Trendforce · Biggo Finance (Reuters Reprint)